 | Prof. Zhi JinDongguan University of Technology, China Zhi Jin, Ph.D., Second-Grade Researcher, Doctoral Supervisor. He is a "Hundred Talents Program" Scholar of the Chinese Academy of Sciences and an expert entitled to the State Council Special Government Allowance. He received his Bachelor's degree in Physics from Hebei Normal University, and his Master's and Ph.D. degrees from Jilin University in Condensed Matter Physics and Microelectronics & Solid-State Electronics, respectively. He conducted postdoctoral and research work at Hokkaido University (Japan), the University of Duisburg-Essen (Germany), and the University of Electro-Communications, Tokyo (Japan). Upon returning to China, he served as a Professor and Laboratory Director at the Institute of Microelectronics, Chinese Academy of Sciences. In March 2025, he joined Dongguan University of Technology as a Second-Grade Researcher. He has long worked on compound semiconductor high-frequency devices and integrated circuits, achieving systematic innovations in device physics, process development, modeling, and terahertz/millimeter-wave circuit design for GaAs, InP, and GaN material systems. His representative achievements include developing China's first InP-based DHBTs for W-band applications and frequency dividers >40 GHz, China's fastest compound-semiconductor-based DDS (10 GHz) and ADC (4 GSps), and pioneering W-band MMICs, terahertz Schottky diodes, and hybrid ICs with commercialized modules, as well as power amplifier chips for 5G base stations. He has led over 10 national-level projects, including Major National S&T Projects and NSFC Key Projects. He has published over 300 papers and holds over 70 authorized invention patents. He has received a Second Prize of Provincial/Ministerial Scientific and Technological Progress Award and a First Prize of the Overseas Chinese Contribution Award. He currently serves as Director of the Beijing Key Laboratory of Ultra-High Frequency, High-Power Compound Semiconductor Devices and Integration Technology, a committee member of the Electromagnetic Spectrum Security and Control Committee (Chinese Institute of Command and Control), and an editorial board member of the Journal of Semiconductors and other journals. |
 | Prof. Cong YeDongguan University of Technology, China Cong Ye, Ph.D., Academic Leading Talent. She received her Bachelor's degree from Hubei University (2002) and her Ph.D. from the Institute of Solid State Physics, Chinese Academy of Sciences. In 2025, she joined the International Microelectronics School at Dongguan University of Technology as a Principal Investigator and Doctoral Supervisor. She has published over ten papers in top-tier journals including ACS Nano and Nano Letters. She currently leads a National Key Research and Development Program project, a National Natural Science Foundation of China (NSFC) project, and a Key Project of the Ministry of Education's Open Research Fund. Her research interests include: (1) advanced memory devices and monolithic 3D integration; (2) memristors and neuromorphic computing; (3) hardware security for integrated circuits; and (4) AI-driven high-throughput computing. |