Prof. Weisheng Zhao

IEEE Fellow, Beihang University, China

Dr. Weisheng Zhao, IEEE Fellow, Professor and Vice President of Beihang University, China. He received the Ph.D. degree in physics from the University of Paris-Sud, Paris, France, in 2007. In 2009, he joined French National Research Center (CNRS), Paris, as a Tenured Research Scientist. Since 2014, he has been a professor with Beihang University, Beijing, China. His research focuses on interdisciplinary studies in spintronics, emerging nonvolatile memory devices, and spin-based integrated circuits. Since returning to China in 2013, he has devoted his efforts to ultra-low-power spintronic memory and logic technologies. He proposed a novel spintronic memory architecture that combines spin-orbit torque (SOT) with spin-transfer torque (STT) to enable high-speed read and write operations. His major achievements also include the development of tungsten-based magnetic tunnel junctions with an ultrahigh tunneling magnetoresistance ratio, the demonstration of fully electrical writing and readout in antiferromagnetic spintronic devices, and the successful development of the world’s first SOT-MRAM chip with a megabit-scale storage capacity. In recent years, he has published more than 300 papers in leading journals and conferences, including Nature Electronics, Proceedings of the IEEE, PRL、PNAS, and IEDM. Among these publications, 15 have been recognized as ESI Highly Cited Papers. His work has received more than 30,000 citations, with an H-index exceeding 90.

Speech Title: Spintronics for Future Electronics